IHP GmbH Leibniz Institut F R Innovative Mikroelektronik Tender

1. Inp Wafer Substrates; 3"" (inch), S-doped Thickness 625 ± 15 Μm; Diameter 76.2 ± 0.3 Mm; Material Inp, Vb; Doping N-type, S-doped, 2-8e18 Cm-3; Mobility 1000-1500 Cm2/vs; Resistivity 5-10e-4 Ohm?cm; Surface Finish Fs Polish/bs Etch; Flat Orientation Primary/major (0-1-1) ± 0.05°; Flat Length 22 ± 1 Mm; Wafer Bow ? 8 Μm; Ttv ? 10 Μm; Tir ? 10 Μm; Orientation (100); Miscut Angle 0.1 ± 0.05° Off Towards (110); Epd Density < 5e2 Cm-2; Packaging N2 Packed Single (device Grade). 2. Inp Wafer Substrates; 3"" (inch), Fe-doped Thickness 625 ± 15 Μm; Diameter 76.2 ± 0.3 Mm; Material Inp, Vb; Semi-insulating, Fe-doped; Resistivity > 1e7 Ohm?cm; Surface Finish Fs Polish/bs Etch; Flat Orientation Primary/major (0-1-1) ± 0.05°; Flat Length 22 ± 1 Mm; Wafer Bow ? 8 Μm; Ttv ? 10 Μm; Tir ? 10 Μm; Orientation (100); Miscut Angle 0.1 ± 0.05° Off Towards (110); Epd Density < 2e4 Cm-2; Packaging N2 Packed Single (device Grade).